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IPAW60R180P7SXKSA1 vs IPAW60R180P7S vs IPAW60R190CE

 
PartNumberIPAW60R180P7SXKSA1IPAW60R180P7SIPAW60R190CE
DescriptionMOSFETSP001606072 (Alt: IPAW60R180P7S)600V CoolMOS CE Power Transisto
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance145 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation26 W--
ConfigurationSingle-1 N-Channel
Channel ModeEnhancement-Enhancement
TradenameCoolMOS--
PackagingTube-Tube
SeriesCoolMOS P7--
Transistor Type1 N-Channel-1 N-Channel
BrandInfineon Technologies--
Fall Time8 ns-8 ns
Product TypeMOSFET--
Rise Time12 ns-10 ns
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns-90 ns
Typical Turn On Delay Time14 ns-12 ns
Part # AliasesIPAW60R180P7S SP001606072--
Unit Weight0.068784 oz--
Part Aliases--IPAW60R190CE SP001391612
Package Case--TO-220-3
Pd Power Dissipation--176 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--26.7 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--2.5 V
Rds On Drain Source Resistance--440 mOhms
Qg Gate Charge--63 nC
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