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| PartNumber | IPA052N08NM5SXKSA1 | IPA050N10NM5SXKSA1 | IPA057N06N |
| Description | MOSFET | MOSFET | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Packaging | Tube | Tube | Tube |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPA052N08NM5S SP001953076 | IPA050N10NM5S SP001962884 | - |
| Series | - | - | OptiMOS 3 |
| Part Aliases | - | - | IPA057N06N3GXK IPA057N06N3GXKSA1 SP000457582 |
| Unit Weight | - | - | 0.211644 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-220-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 38 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 9 ns |
| Rise Time | - | - | 68 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 60 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 5.7 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 32 ns |
| Typical Turn On Delay Time | - | - | 24 ns |
| Qg Gate Charge | - | - | 61 nC |
| Forward Transconductance Min | - | - | 82 S |
| Channel Mode | - | - | Enhancement |