IKW30N60DTPXKSA1 vs IKW30N60 vs IKW30N60DTP

 
PartNumberIKW30N60DTPXKSA1IKW30N60IKW30N60DTP
DescriptionIGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener- Bulk (Alt: IKW30N60DTP)
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.6 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C53 A--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
Series600V TRENCHSTOP-TrenchStop
PackagingTube-*
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIKW30N60DTP SP001379684--
Package Case--*
Input Type--Standard
Mounting Type--*
Supplier Device Package--*
Power Max--200W
Reverse Recovery Time trr--76ns
Current Collector Ic Max--53A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--90A
Vce on Max Vge Ic--1.8V @ 15V, 30A
Switching Energy--710μJ (On), 420μJ (Off)
Gate Charge--130nC
Td on off 25°C--15ns/179ns
Test Condition--400V, 30A, 10.5 Ohm, 15V
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