IKW15N120BH6XKSA1 vs IKW15N120 vs IKW15N120H2

 
PartNumberIKW15N120BH6XKSA1IKW15N120IKW15N120H2
DescriptionIGBT Transistors INDUSTRY 14
ManufacturerInfineonINF-
Product CategoryIGBT TransistorsIC Chips-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.9 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesIGBT6--
PackagingTube--
Continuous Collector Current Ic Max30 A--
BrandInfineon Technologies--
Gate Emitter Leakage Current600 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIKW15N120BH6--
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