IHW40N60R vs IHW40N60R,H40R60, vs IHW40N60R,IHW30N120R2,

 
PartNumberIHW40N60RIHW40N60R,H40R60,IHW40N60R,IHW30N120R2,
DescriptionIGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.65 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation305 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesRC--
PackagingTube--
Height20.95 mm--
Length15.9 mm--
Width5.3 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIHW40N60RFKSA1 IHW4N6RXK SP000357222--
Unit Weight1.340411 oz--
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