IHW30N110R3FKSA1 vs IHW30N110R3 vs IHW30N110R3,H30R1103,

 
PartNumberIHW30N110R3FKSA1IHW30N110R3IHW30N110R3,H30R1103,
DescriptionIGBT Transistors IGBT PRODUCTSIGBT Transistors IGBT PRODUCTS
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1100 V1100 V-
Collector Emitter Saturation Voltage1.55 V1.55 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation333 W333 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesRCRC-
PackagingTubeTube-
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity240240-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIHW30N110R3 IHW3N11R3XK SP000702510IHW30N110R3FKSA1 IHW3N11R3XK SP000702510-
Unit Weight0.190479 oz0.229281 oz-
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