IHW15N120R2 vs IHW15N120R vs IHW15N120R2 H15R1202

 
PartNumberIHW15N120R2IHW15N120RIHW15N120R2 H15R1202
DescriptionIGBT Transistors REVERSE CONDUCT IGBT 1200V 15AIGBT Transistors REVERSE CONDUCT IGBT 1200V 15A
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage1.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C15 A--
Pd Power Dissipation357 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max30 A--
Height20.9 mm--
Length15.9 mm--
Width5.03 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
Part # AliasesIHW15N120R2XK SP000212014--
Unit Weight1.340411 oz--
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