IHW15N120E1XKSA1 vs IHW15N120 vs IHW15N120E1

 
PartNumberIHW15N120E1XKSA1IHW15N120IHW15N120E1
DescriptionIGBT Transistors IGBT PRODUCTS
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage1.5 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation156 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTube-
Continuous Collector Current Ic Max30 A--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
Part # AliasesIHW15N120E1 SP001391908--
Unit Weight0.211644 oz--
Series---
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-PG-TO247-3-
Power Max-357W-
Reverse Recovery Time trr---
Current Collector Ic Max-30A-
Voltage Collector Emitter Breakdown Max-1200V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-45A-
Vce on Max Vge Ic-1.75V @ 15V, 15A-
Switching Energy-900μJ (off)-
Gate Charge-133nC-
Td on off 25°C--/282ns-
Test Condition-600V, 15A, 14.8 Ohm, 15V-
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