IFF600B12ME4PB11BPSA1 vs IFF600B12ME4P_B11 vs IFF600B12ME4B11BOSA1

 
PartNumberIFF600B12ME4PB11BPSA1IFF600B12ME4P_B11IFF600B12ME4B11BOSA1
DescriptionIGBT ModulesMEDIUM POWER ECONO
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.75 V--
Continuous Collector Current at 25 C600 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation20 mW--
Package / Case152 mm x 62.5 mm x 20.5 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StylePress Fit--
Maximum Gate Emitter Voltage15 V--
Product TypeIGBT Modules--
Factory Pack Quantity6--
SubcategoryIGBTs--
Part # AliasesSP001377694--
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