PartNumber | IDW20G65C5,D2065C5 | IDW20G65C5B | IDW20G65C5 |
Description | Schottky Diodes & Rectifiers SIC DIODES | ||
Manufacturer | - | - | Infineon Technologies |
Product Category | - | - | Diodes, Rectifiers - Single |
Series | - | - | thinQ! |
Product | - | - | Schottky Silicon Carbide Diodes |
Packaging | - | - | Tube |
Part Aliases | - | - | IDW20G65C5FKSA1 IDW20G65C5XK SP000937050 |
Unit Weight | - | - | 1.340411 oz |
Mounting Style | - | - | Through Hole |
Package Case | - | - | TO-247-3 |
Technology | - | - | SiC |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | PG-TO247-3 |
Configuration | - | - | Single |
Speed | - | - | No Recovery Time > 500mA (Io) |
Diode Type | - | - | Silicon Carbide Schottky |
Current Reverse Leakage Vr | - | - | 700μA @ 650V |
Voltage Forward Vf Max If | - | - | 1.7V @ 20A |
Voltage DC Reverse Vr Max | - | - | 650V |
Current Average Rectified Io | - | - | 20A (DC) |
Reverse Recovery Time trr | - | - | 0ns |
Capacitance Vr F | - | - | 590pF @ 1V, 1MHz |
Operating Temperature Junction | - | - | -55°C ~ 175°C |
Pd Power Dissipation | - | - | 112 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Vf Forward Voltage | - | - | 1.5 V |
Vr Reverse Voltage | - | - | 650 V |
Ir Reverse Current | - | - | 210 uA |
If Forward Current | - | - | 20 A |
Vrrm Repetitive Reverse Voltage | - | - | 650 V |
Ifsm Forward Surge Current | - | - | 103 A |
trr Reverse Recovery time | - | - | - |