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| PartNumber | HGTG30N60B3 | HGTG30N60B3D | HGTG30N60B3 G30N60B3 |
| Description | IGBT Transistors 600V N-Channel IGBT UFS Series | IGBT Transistors 600V IGBT UFS N-Channel | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.45 V | 1.45 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 60 A | 60 A | - |
| Pd Power Dissipation | 208 W | 208 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | HGTG30N60B3 | HGTG30N60B3D | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 60 A | 60 A | - |
| Height | 20.82 mm | 20.82 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Width | 4.82 mm | 4.82 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | 60 A | 60 A | - |
| Gate Emitter Leakage Current | +/- 250 nA | +/- 250 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 450 | 450 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | HGTG30N60B3_NL | HGTG30N60B3D_NL | - |
| Unit Weight | 0.225401 oz | 0.225401 oz | - |