FQPF4N90C vs FQPF4N90C,4N90C vs FQPF4N90C/FQP4N90C

 
PartNumberFQPF4N90CFQPF4N90C,4N90CFQPF4N90C/FQP4N90C
DescriptionMOSFET 900V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance4.2 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation47 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.07 mm--
Length10.36 mm--
SeriesFQPF4N90C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5 S--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time50 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesFQPF4N90C_NL--
Unit Weight0.080072 oz--
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