FQP4N90C vs FQP4N90 vs FQP4N90C FQPF4N90C

 
PartNumberFQP4N90CFQP4N90FQP4N90C FQPF4N90C
DescriptionMOSFET 900V N-Ch Q-FET advance C-SeriesMOSFET 900V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage900 V900 V-
Id Continuous Drain Current4 A4.2 A-
Rds On Drain Source Resistance4.2 Ohms3.1 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation140 W140 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
SeriesFQP4N90C--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min5 S3.5 S-
Fall Time35 ns40 ns-
Product TypeMOSFETMOSFET-
Rise Time50 ns70 ns-
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns45 ns-
Typical Turn On Delay Time25 ns25 ns-
Unit Weight0.063493 oz0.050717 oz-
Part # Aliases-FQP4N90_NL-
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