FQD7N30TM vs FQD7N30TF vs FQD7N30TM,FQD7N30

 
PartNumberFQD7N30TMFQD7N30TFFQD7N30TM,FQD7N30
DescriptionMOSFET 300V N-Channel QFETMOSFET 300V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V300 V-
Id Continuous Drain Current5.5 A5.5 A-
Rds On Drain Source Resistance700 mOhms700 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD7N30--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min4 S4 S-
Fall Time35 ns35 ns-
Product TypeMOSFETMOSFET-
Rise Time75 ns75 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesFQD7N30TM_NLFQD7N30TF_NL-
Unit Weight0.009184 oz0.139332 oz-
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