FQD5N60CTM vs FQD5N60CTF vs FQD5N60CTM,FQD5N60C,D5N6

 
PartNumberFQD5N60CTMFQD5N60CTFFQD5N60CTM,FQD5N60C,D5N6
DescriptionMOSFET 600V N-Channel Adv Q-FET C-SeriesMOSFET 600V N-Channel Adv Q-FET C-Series
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current2.8 A2.8 A-
Rds On Drain Source Resistance2.5 Ohms2.5 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD5N60C--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time46 ns46 ns-
Product TypeMOSFETMOSFET-
Rise Time42 ns42 ns-
Factory Pack Quantity2500750-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time38 ns38 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesFQD5N60CTM_NLFQD5N60CTF_NL-
Unit Weight0.009184 oz0.139332 oz-
Type-MOSFET-
Forward Transconductance Min-4.7 S-
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