FQD2N60CTM vs FQD2N60CTM,FQD2N60C vs FQD2N60CTM,FQD2N60C,D2N6

 
PartNumberFQD2N60CTMFQD2N60CTM,FQD2N60CFQD2N60CTM,FQD2N60C,D2N6
DescriptionMOSFET N-CH/600V/2A/A.QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current1.9 A--
Rds On Drain Source Resistance3.6 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD2N60C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5 S--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesFQD2N60CTM_NL--
Unit Weight0.009171 oz--
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