FQA10N80 vs FQA10N80,FQA10N80C vs FQA10N80A

 
PartNumberFQA10N80FQA10N80,FQA10N80CFQA10N80A
DescriptionMOSFET 800V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current9.8 A--
Rds On Drain Source Resistance1.05 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation240 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min10 S--
Fall Time75 ns--
Product TypeMOSFET--
Rise Time115 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time125 ns--
Typical Turn On Delay Time45 ns--
Part # AliasesFQA10N80_NL--
Unit Weight0.000198 oz--
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