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| PartNumber | FGH50T65SQD-F155 | FGH50T65 | FGH50T65SQD |
| Description | IGBT Transistors 650V FS4 Trench IGBT | ||
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.6 V | 2.1 V | - |
| Maximum Gate Emitter Voltage | 20 V | 25 V | - |
| Continuous Collector Current at 25 C | 100 A | 100 A | - |
| Pd Power Dissipation | 268 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | FGH50T65SQD | - | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 100 A | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Gate Emitter Leakage Current | +/- 400 nA | 400 nA | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FGH50T65SQD_F155 | - | - |
| Unit Weight | 0.225401 oz | 0.225401 oz | - |
| Package Case | - | TO-247-3 | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-247 | - |
| Power Max | - | 340W | - |
| Reverse Recovery Time trr | - | 53ns | - |
| Current Collector Ic Max | - | 100A | - |
| Voltage Collector Emitter Breakdown Max | - | 650V | - |
| IGBT Type | - | Trench Field Stop | - |
| Current Collector Pulsed Icm | - | 150A | - |
| Vce on Max Vge Ic | - | 2.3V @ 15V, 50A | - |
| Switching Energy | - | 2.7mJ (on), 740μJ (off) | - |
| Gate Charge | - | 230nC | - |
| Td on off 25°C | - | 32ns/160ns | - |
| Test Condition | - | 400V, 50A, 6 Ohm, 15V | - |
| Pd Power Dissipation | - | 240 W | - |
| Collector Emitter Voltage VCEO Max | - | 650 V | - |