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| PartNumber | FF450R07ME4_B11 | FF450R07ME4B11BOSA1 | FF450R07ME4 |
| Description | IGBT Modules IGBT Module 450A 650V | Trans IGBT Module N-CH 650V 560A 1450000mW 11-Pin AG-ECONOD-3 Tray | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.95 V | - | - |
| Continuous Collector Current at 25 C | 560 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 1450 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 6 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF450R07ME4B11BOSA1 SP000725482 | - | - |