FDD86102 vs FDD86102 86102 vs FDD86102 FDC3601 LM2907M

 
PartNumberFDD86102FDD86102 86102FDD86102 FDC3601 LM2907M
DescriptionMOSFET 100V N-Channel PowerTrench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance19 mOhms--
Vgs th Gate Source Threshold Voltage3.1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
Pd Power Dissipation3.1 W--
ConfigurationSingle--
TradenamePowerTrench--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFDD86102--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min21 S--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.009184 oz--
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