FDB8870 vs FDB8870_F085 vs FDB8870 IRL3803STRLPBF

 
PartNumberFDB8870FDB8870_F085FDB8870 IRL3803STRLPBF
DescriptionMOSFET 30V N-Channel PowerTrenchIGBT Transistors MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH
ManufacturerON SemiconductorFSC-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current160 A--
Rds On Drain Source Resistance3.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation160 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerTrench--
PackagingReelReel-
Height4.83 mm--
Length10.67 mm--
SeriesFDB8870--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time47 ns47 ns-
Product TypeMOSFET--
Rise Time98 ns98 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns75 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesFDB8870_NL--
Unit Weight0.046296 oz0.046296 oz-
Package Case-TO-252-3-
Pd Power Dissipation-160 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-23 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-3.9 mOhms-
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