FDB0105N407L vs FDB0165N807L vs FDB016N004AL7

 
PartNumberFDB0105N407LFDB0165N807LFDB016N004AL7
DescriptionMOSFET 40V N-Channel Power Trench MOSFETMOSFET N-CH 80V 310A TO263
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-7--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current460 A--
Rds On Drain Source Resistance1.8 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge208 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height4.7 mm--
Length10.2 mm--
SeriesFDB0105N407L--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min286 S--
Fall Time61 ns--
Product TypeMOSFET--
Rise Time69 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time117 ns--
Typical Turn On Delay Time45 ns--
Unit Weight0.046279 oz--
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