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| PartNumber | F3L50R06W1E3_B11 | F3L50R06W1E3 | F3L50R06W1E3B11BOMA1 |
| Description | IGBT Modules IGBT MODULES 600V 50A | IGBT MODULE VCES 600V 50A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | IGBT-Inverter | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.45 V | - | - |
| Continuous Collector Current at 25 C | 75 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 175 W | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 24 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | F3L50R06W1E3B11BOMA1 SP000667798 | - | - |