DTA114TET1G vs DTA114TET1 vs DTA114TET

 
PartNumberDTA114TET1GDTA114TET1DTA114TET
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNPBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationSingleSingle-
Transistor PolarityPNPPNP-
Typical Input Resistor10 kOhms10 kOhms-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-75-3SC-75-3-
DC Collector/Base Gain hfe Min160160-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation200 mW200 mW-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDTA114TE--
PackagingReelReel-
DC Current Gain hFE Max160160-
Height0.75 mm0.75 mm-
Length1.6 mm1.6 mm-
Width0.8 mm0.8 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
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