DMPH6023SK3-13 vs DMPH6050SFGQ-13 vs DMPH6023SK3Q-13

 
PartNumberDMPH6023SK3-13DMPH6050SFGQ-13DMPH6023SK3Q-13
DescriptionMOSFET MOSFETBVDSS: 41V-60VMOSFET MOSFET BVDSS: 41V-60VMOSFET MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3PowerDI3333-8TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current35 A18 A-
Rds On Drain Source Resistance33 mOhms50 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge53.1 nC24.1 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation3.2 W2.8 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
Transistor Type1 P-Channel--
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time62 ns25.3 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time7.1 ns6.3 ns-
Factory Pack Quantity250030002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time110 ns46.7 ns-
Typical Turn On Delay Time6 ns4.3 ns-
Unit Weight0.011640 oz0.002540 oz0.011993 oz
Qualification-AEC-Q101AEC-Q101
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