DMN3730UFB4-7 vs DMN3730UFB-7 vs DMN3730UFB-7B

 
PartNumberDMN3730UFB4-7DMN3730UFB-7DMN3730UFB-7B
DescriptionMOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5VMOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseX2-DFN1006-3X1-DFN1006-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current730 mA730 mA-
Rds On Drain Source Resistance460 mOhms460 mOhms-
Vgs Gate Source Voltage8 V8 V-
Qg Gate Charge1.6 nC1.6 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation690 mW690 mW-
ConfigurationSingleSingle-
PackagingReelReel-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesDMN37DMN37-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min40 mS40 mS-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.000529 oz--
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