D45H8G vs D45H8 vs D45H8A

 
PartNumberD45H8GD45H8D45H8A
DescriptionBipolar Transistors - BJT 10A 60V 50W PNPBipolar Transistors - BJT Power Transisto
ManufacturerON SemiconductorSTMRC-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current10 A10 A-
Gain Bandwidth Product fT40 MHz40 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesD45H8D45H8-
Height15.75 mm--
Length10.53 mm--
PackagingTubeTube-
Width4.83 mm--
BrandON Semiconductor--
Continuous Collector Current10 A8 A-
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation70 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.211644 oz0.063493 oz-
Package Case-TO-220-3-
Pd Power Dissipation-480 W-
Collector Emitter Voltage VCEO Max-60 V-
Collector Base Voltage VCBO-- 5 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-60-
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