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| PartNumber | CY7S1041G30-10ZSXI | CY7S1041G30-10ZSXIT | CY7S1041G30-10ZSXIES |
| Description | SRAM CMOS RAM W ECC 4-Mbit | SRAM Async SRAMS | |
| Manufacturer | Cypress Semiconductor | Cypress Semiconductor | - |
| Product Category | SRAM | SRAM | - |
| RoHS | Y | Y | - |
| Memory Size | 4 Mbit | 4 Mbit | - |
| Organization | 256 k x 16 | 256 k x 16 | - |
| Access Time | 10 ns | 10 ns | - |
| Maximum Clock Frequency | - | - | - |
| Interface Type | Parallel | Parallel | - |
| Supply Voltage Max | 3.6 V | 3.6 V | - |
| Supply Voltage Min | 2.2 V | 2.2 V | - |
| Supply Current Max | 45 mA | 45 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-44 | TSOP-44 | - |
| Packaging | Tray | Reel | - |
| Memory Type | Volatile | SDR | - |
| Type | Asynchronous | - | - |
| Brand | Cypress Semiconductor | Cypress Semiconductor | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | SRAM | SRAM | - |
| Factory Pack Quantity | 135 | 1000 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |