CXDM1002N TR vs CXDM1002N vs CXDM3069N

 
PartNumberCXDM1002N TRCXDM1002NCXDM3069N
DescriptionMOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
ManufacturerCentral SemiconductorCentral Semiconductor
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-89--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance140 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge6 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.2 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height1.7 mm--
Length4.7 mm--
SeriesCWDMCXDM10CXDM30
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width2.7 mm--
BrandCentral Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns50 ns-
Typical Turn On Delay Time32 ns32 ns-
Part # AliasesCXDM1002N PBFREE TR--
Unit Weight0.004603 oz0.004603 oz0.004603 oz
Package Case-SOT-89-3SOT-89-3
Pd Power Dissipation-1.2 W1.2 W
Vgs Gate Source Voltage-20 V12 V
Id Continuous Drain Current-2 A6.9 A
Vds Drain Source Breakdown Voltage-100 V30 V
Vgs th Gate Source Threshold Voltage-2.1 V-
Rds On Drain Source Resistance-140 mOhms50 mOhms
Qg Gate Charge-6 nC11 nC
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