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CGHV1J006D-GP4 vs CGHV1J025 vs CGHV1J006D

 
PartNumberCGHV1J006D-GP4CGHV1J025CGHV1J006D
DescriptionRF JFET Transistors GaN HEMT Die DC-18GHz, 6 WattRF JFET Transistors DC-18GHz 6W GaN Gain@10GHz 17dB
ManufacturerCree, Inc.Wolfspeed / CreeWolfspeed / Cree
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHEMTHEMTHEMT
TechnologyGaNGaN SiCGaN SiC
Gain17 dB17 dB17 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V--
Vgs Gate Source Breakdown Voltage- 10 V to 2 V--
Id Continuous Drain Current0.8 A--
Output Power6 W25 W6 W
Maximum Drain Gate Voltage---
Minimum Operating Temperature---
Maximum Operating Temperature---
Pd Power Dissipation---
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDie--
PackagingGel PackGel PackGel Pack
Application---
ConfigurationSingle-Single
Height100 um--
Length840 um--
Operating Frequency10 MHz to 18 GHz10 MHz to 18 GHz10 MHz to 18 GHz
Operating Temperature Range---
ProductGaN HEMT--
Width800 um--
BrandWolfspeed / Cree--
Gate Source Cutoff Voltage---
Class---
Development Kit---
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET Transistors--
Rds On Drain Source Resistance2.3 Ohms--
Rise Time---
Factory Pack Quantity10--
SubcategoryTransistors--
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage- 3 V--
Package Case-Bare DieBare Die
Pd Power Dissipation---
Id Continuous Drain Current-2 A0.8 A
Vds Drain Source Breakdown Voltage-100 V100 V
Vgs th Gate Source Threshold Voltage-- 3V- 3 V
Rds On Drain Source Resistance-0.6 Ohms2.3 Ohms
Forward Transconductance Min---
Vgs Gate Source Breakdown Voltage-- 10 V to + 2 V- 10 V to + 2 V
NF Noise Figure---
P1dB Compression Point---
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