BUZ30A H vs BUZ30AH3045AATMA1 vs BUZ30A H3045A

 
PartNumberBUZ30A HBUZ30AH3045AATMA1BUZ30A H3045A
DescriptionMOSFET N-Ch 200V 21A TO220FP-3MOSFET N-Ch 200V 21A D2PAK-2Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: BUZ30AH3045AATMA1)
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleSMD/SMTSMD/SMT
Package / CaseTO-220-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current21 A21 A-
Rds On Drain Source Resistance100 mOhms100 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge---
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation125 W125 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameSIPMOSSIPMOSOptiMOS
PackagingTubeReelReel
Height15.65 mm15.65 mm-
Length10 mm10 mm-
SeriesBUZ30-BUZ30
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min6 S6 S-
Fall Time90 ns90 ns90 ns
Product TypeMOSFETMOSFET-
Rise Time70 ns70 ns70 ns
Factory Pack Quantity5001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time250 ns250 ns250 nS
Typical Turn On Delay Time30 ns30 ns-
Part # AliasesBUZ30AHXKSA1 BUZ3AHXK SP000682990BUZ30A BUZ3AH345AXT H3045A SP000736082-
Unit Weight0.211644 oz0.139332 oz0.139332 oz
Part Aliases--BUZ30AH3045AATMA1 BUZ30AH3045AXT SP000736082
Package Case--TO-252-3
Pd Power Dissipation--125 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--21 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--130 mOhms
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