BUK7880-55/CUF vs BUK7880-55 vs BUK7880-55135

 
PartNumberBUK7880-55/CUFBUK7880-55BUK7880-55135
DescriptionMOSFET N-channel TrenchMOS standard level FETMOSFET, N CH 55V SOT223Now Nexperia BUK7880-55 - Power Field-Effect Transistor, 7.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current7.5 A--
Rds On Drain Source Resistance65 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage16 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation8.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Forward Transconductance Min1 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.009171 oz--
Top