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| PartNumber | BSZ021N04LS6ATMA1 | BSZ023N04LSATMA1 | BSZ023N04LS |
| Description | MOSFET 40V Mosfet 2,1mOhm, S3O8MOSFET, Power MOSFET | MOSFET N-Ch 40V 40A TSDSON-8 FL | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PQFN-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Rds On Drain Source Resistance | 2.1 mOhms | 2.4 mOhms | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Series | BSZ0xx | BSZ023N04 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Technology | - | Si | - |
| Id Continuous Drain Current | - | 40 A | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Qg Gate Charge | - | 37 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 69 W | - |
| Height | - | 1.1 mm | - |
| Length | - | 3.3 mm | - |
| Width | - | 3.3 mm | - |
| Forward Transconductance Min | - | 55 S | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 38 ns | - |
| Typical Turn Off Delay Time | - | 42 ns | - |
| Typical Turn On Delay Time | - | 13 ns | - |
| Part # Aliases | - | SP000953208 | - |