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| PartNumber | BSV236SP H6327 | BSV236SP L6327 | BSV236SP |
| Description | MOSFET P-Ch -20V -1.5A SOT-363-6 | MOSFET P-Ch -20V 1.5A SOT-363-6 | MOSFET, P CH, -20V, -1.5A, SOT-363-6 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | GaN | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 1.5 A | 1.5 A | - |
| Rds On Drain Source Resistance | 131 mOhms | 175 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | - 5.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 560 mW | 560 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 0.9 mm | 0.9 mm | - |
| Length | 2 mm | 2 mm | - |
| Series | BSV236 | BSV236 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 2.2 S | - | - |
| Fall Time | 12.2 ns | 8.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.5 ns | 8.5 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 14.1 ns | 14.1 ns | - |
| Typical Turn On Delay Time | 5.7 ns | 5.7 ns | - |
| Part # Aliases | BSV236SPH6327XT BSV236SPH6327XTSA1 SP000917672 | BSV236SPL6327HTSA1 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Product | - | MOSFET Small Signal | - |