BSM400C12P3G202 vs BSM400AG170DLC vs BSM400D12P3G002

 
PartNumberBSM400C12P3G202BSM400AG170DLCBSM400D12P3G002
DescriptionDiscrete Semiconductor Modules 1200V Vdss; 358A ID SiC Mod; SICSTD02Trans MOSFET N-CH 1200V 400A 11-Pin (Alt: BSM400D12P3G002)
ManufacturerROHM Semiconductor--
Product CategoryDiscrete Semiconductor Modules--
RoHSY--
ProductPower Semiconductor Modules--
TypeSiC Power Module--
Vf Forward Voltage1.7 V at 400 A--
Vgs Gate Source Voltage- 4 V, 22 V--
Mounting StyleScrew Mount--
Package / CaseModule--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
SeriesBSMx--
PackagingTray--
ConfigurationChopper--
TechnologySiC--
BrandROHM Semiconductor--
Transistor PolarityN-Channel--
Typical Delay Time55 ns--
Fall Time45 ns--
Id Continuous Drain Current358 A--
Pd Power Dissipation1570 W--
Product TypeDiscrete Semiconductor Modules--
Rise Time40 ns--
Factory Pack Quantity4--
SubcategoryDiscrete Semiconductor Modules--
Typical Turn Off Delay Time180 ns--
Typical Turn On Delay Time55 ns--
Vds Drain Source Breakdown Voltage1200 V--
Vgs th Gate Source Threshold Voltage2.7 V--
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