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| PartNumber | BSC030N03MS G | BSC030N03MSGATMA1 | BSC030N03MSGATMA1 , TDA7 |
| Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 2.5 mOhms | 2.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 73 nC | 73 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 69 W | 69 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3M | OptiMOS 3M | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 48 S | 48 S | - |
| Fall Time | 9.4 ns | 9.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | - |
| Typical Turn On Delay Time | 19 ns | 19 ns | - |
| Part # Aliases | BSC030N03MSGATMA1 BSC3N3MSGXT SP000311506 | BSC030N03MS BSC3N3MSGXT G SP000311506 | - |