BSB165N15NZ3 G vs BSB165N15NZ3GXUMA1 vs BSB16GCDRS4EM

 
PartNumberBSB165N15NZ3 GBSB165N15NZ3GXUMA1BSB16GCDRS4EM
DescriptionMOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseWDSON-2-3WDSON-2-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V150 V-
Id Continuous Drain Current45 A45 A-
Rds On Drain Source Resistance13.1 mOhms13.1 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge35 nC35 nC-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation78 W78 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min24 S24 S-
Fall Time7 ns7 ns-
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time17 ns17 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesBSB165N15NZ3GXT BSB165N15NZ3GXUMA1 SP000617000BSB165N15NZ3 BSB165N15NZ3GXT G SP000617000-
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