 |  |  | |
| PartNumber | BF998E6327HTSA1 | BF 998 E6327 | BF998E6327XT |
| Description | RF MOSFET Transistors N-CH 12 V 30 mA | RF MOSFET Transistors N-CH 12 V 30 mA | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | SOT-143-4 | SOT-143 | - |
| Packaging | Reel | Reel | - |
| Series | BF998 | BF998 | - |
| Type | RF Small Signal MOSFET | RF Small Signal MOSFET | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | 998 BF BF998E6327XT E6327 SP000010978 | BF998E6327HTSA1 BF998E6327XT SP000010978 | - |
| Unit Weight | 0.000353 oz | 0.000353 oz | - |
| Transistor Polarity | - | N-Channel | - |
| Id Continuous Drain Current | - | 30 mA | - |
| Vds Drain Source Breakdown Voltage | - | 12 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Mounting Style | - | SMD/SMT | - |
| Configuration | - | Single Dual Gate | - |
| Height | - | 1 mm | - |
| Length | - | 2.9 mm | - |
| Width | - | 1.3 mm | - |
| Channel Mode | - | Enhancement | - |
| Pd Power Dissipation | - | 200 mW | - |
| Vgs Gate Source Voltage | - | 8 V to 12 V | - |