 |  | | |
| PartNumber | BF 888 H6327 | BF888 | BF888 E6327 |
| Description | RF Bipolar Transistors RF BIP TRANSISTOR | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | RF Bipolar Transistors | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Series | BF888 | BF888 | - |
| Transistor Type | Bipolar Power | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 250 | - | - |
| Collector Emitter Voltage VCEO Max | 4 V | - | - |
| Emitter Base Voltage VEBO | 13 V | - | - |
| Continuous Collector Current | 30 mA | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | - | - |
| Packaging | Reel | Reel | - |
| Type | RF Bipolar Power | - | - |
| Brand | Infineon Technologies | - | - |
| Pd Power Dissipation | 160 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BF888H6327XT BF888H6327XTSA1 SP000745170 | - | - |
| Part Aliases | - | 888 BF BF888H6327XT H6327 SP000745170 | - |
| Package Case | - | SOT-343-4 | - |