BD537KTU vs BD537-K vs BD537KA

 
PartNumberBD537KTUBD537-KBD537KA
DescriptionBipolar Transistors - BJT NPN Si Transistor Epitaxial
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSN--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT12 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height9.65 mm (Max)--
Length10.67 mm (Max)--
PackagingTube--
Width4.83 mm (Max)--
BrandON Semiconductor / Fairchild--
Continuous Collector Current8 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation50 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.080072 oz--
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