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BD244BG vs BD244B-S vs BD244B

 
PartNumberBD244BGBD244B-SBD244B
DescriptionBipolar Transistors - BJT 6A 80V 65W PNPBipolar Transistors - BJT 80V 6A PNPTRANS PNP 80V 6A TO220AB
ManufacturerON SemiconductorBournsFairchild Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1.5 V-- 1.5 V
Maximum DC Collector Current6 A6 A6 A
Gain Bandwidth Product fT3 MHz-3 MHz
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesBD244B--
Height15.75 mm9.3 mm-
Length10.53 mm10.4 mm-
PackagingTubeReelBulk
Width4.83 mm4.7 mm-
BrandON SemiconductorBourns-
Continuous Collector Current6 A6 A- 6 A
DC Collector/Base Gain hfe Min3030 at 300 mA, 4 V, 15 at 3 A, 4 V-
Pd Power Dissipation65 W65 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity5015000-
SubcategoryTransistorsTransistors-
Unit Weight0.211644 oz0.211644 oz0.063493 oz
Package Case--TO-220-3
Mounting Type--Through Hole
Supplier Device Package--TO-220
Power Max--65W
Transistor Type--PNP
Current Collector Ic Max--6A
Voltage Collector Emitter Breakdown Max--80V
DC Current Gain hFE Min Ic Vce--15 @ 3A, 4V
Vce Saturation Max Ib Ic--1.5V @ 1A, 6A
Current Collector Cutoff Max--700μA
Frequency Transition---
Pd Power Dissipation--65 W
Collector Emitter Voltage VCEO Max--- 80 V
Collector Base Voltage VCBO--- 80 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--30
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