BD140-16 vs BD14010S vs BD140-10

 
PartNumberBD140-16BD14010SBD140-10
DescriptionBipolar Transistors - BJT PNP Silicon TrnsistrBipolar Transistors - BJT PNP Epitaxial SilBipolar Transistors - BJT PNP Silicon Trnsist
ManufacturerSTMicroelectronicsON SemiconductorFSC
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseSOT-32-3TO-126-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 80 V- 80 V-
Collector Base Voltage VCBO- 80 V- 80 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Maximum DC Collector Current1.5 A1.5 A-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBD140BD140-
Height10.8 mm11 mm-
Length7.8 mm8 mm-
Width2.7 mm3.25 mm-
BrandSTMicroelectronicsON Semiconductor / Fairchild-
Pd Power Dissipation1250 mW12.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity2000250-
SubcategoryTransistorsTransistors-
Unit Weight0.002116 oz0.026843 oz-
Collector Emitter Saturation Voltage-- 0.5 V-
DC Current Gain hFE Max-250-
Packaging-Bulk-
Continuous Collector Current-- 1.5 A-
DC Collector/Base Gain hfe Min-40-
Part # Aliases-BD14010S_NL-
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