BCW69 vs BCW69 H1P 1P vs BCW69 H1P IY 1Y

 
PartNumberBCW69BCW69 H1P 1PBCW69 H1P IY 1Y
DescriptionBipolar Transistors - BJT SOT-23 PNP GP AMP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 5 V--
Maximum DC Collector Current0.1 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBCW69--
DC Current Gain hFE Max260--
Height0.93 mm--
Length2.92 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation300 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
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