BCP56-16T1G vs BCP5616TA vs BCP56 16T1

 
PartNumberBCP56-16T1GBCP5616TABCP56 16T1
DescriptionBipolar Transistors - BJT 1A 100V NPNBipolar Transistors - BJT NPN Medium Power
ManufacturerON SemiconductorDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO100 V100 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT130 MHz125 MHz-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBCP56BCP56-
Height1.57 mm--
Length6.5 mm--
PackagingReelReel-
Width3.5 mm--
BrandON SemiconductorDiodes Incorporated-
Continuous Collector Current1 A1 A-
DC Collector/Base Gain hfe Min2525 at 5 mA, 2 V-
Pd Power Dissipation1.5 W2 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
DC Current Gain hFE Max-250 at 150 mA, 2 V-
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