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| PartNumber | BC 860B E6327 | BC860B /T3 | BC860B |
| Description | Bipolar Transistors - BJT PNP Silicon AF Transistor | Bipolar Transistors - BJT TRANS GP TAPE-13 | Transistor: PNP, bipolar, 45V, 100mA, 250mW, SOT23 |
| Manufacturer | Infineon | - | ZETEX |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 250 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC860 | - | - |
| DC Current Gain hFE Max | 450 | - | - |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 330 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BC860BE6327HTSA1 BC86BE6327XT SP000010642 | - | - |
| Unit Weight | 0.000282 oz | - | - |