 |  | | |
| PartNumber | BC856W,115 | BC856W | BC856W , P4KE36A-TP |
| Description | Bipolar Transistors - BJT TRANS GP TAPE-7 | TRANS, PNP, -65V, 100MHZ, SOT-323-3, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-65V, Transition Frequency ft:100MHz, Power Dissipation Pd:200mW, DC Collector Current:-100mA, DC | |
| Manufacturer | Nexperia | CJ | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 65 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 125 at 2 mA, 5 V | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.35 mm | - | - |
| Brand | Nexperia | - | - |
| DC Collector/Base Gain hfe Min | 125 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BC856W T/R | - | - |
| Unit Weight | 0.000176 oz | - | - |