BC847CM,315 vs BC847CM T/R vs BC847CM

 
PartNumberBC847CM,315BC847CM T/RBC847CM
DescriptionBipolar Transistors - BJT NPN GP 45V 100mABipolar Transistors - BJT NPN GP 45V 100mA
ManufacturerNexperia-NXP Semiconductors
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseDFN-1006-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max420 at 2 mA, 5 V--
Height0.47 mm--
Length1.02 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width0.62 mm--
BrandNexperia--
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V--
Pd Power Dissipation430 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity10000--
SubcategoryTransistors--
Part # AliasesBC847CM T/R--
Unit Weight0.000028 oz--
Series--Automotive, AEC-Q101
Package Case--SC-101, SOT-883
Mounting Type--Surface Mount
Supplier Device Package--DFN1006-3
Power Max--250mW
Transistor Type--NPN
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--45V
DC Current Gain hFE Min Ic Vce--420 @ 2mA, 5V
Vce Saturation Max Ib Ic--400mV @ 5mA, 100mA
Current Collector Cutoff Max--15nA (ICBO)
Frequency Transition--100MHz
Top