AUIRFS8407-7P vs AUIRFS8407-7 vs AUIRFS8407-7PPBF

 
PartNumberAUIRFS8407-7PAUIRFS8407-7AUIRFS8407-7PPBF
DescriptionMOSFET 40V SGL N-CH HEXFET 1.3mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current240 A--
Rds On Drain Source Resistance1.3 mOhms--
Vgs th Gate Source Threshold Voltage3.9 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge150 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation230 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
TradenameCoolIRFetCoolIRFet-
PackagingTubeTube-
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min122 S--
Fall Time51 ns51 ns-
Product TypeMOSFET--
Rise Time62 ns62 ns-
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time78 ns78 ns-
Typical Turn On Delay Time18 ns18 ns-
Part # AliasesSP001518052--
Unit Weight0.056438 oz0.056438 oz-
Package Case-TO-263-7-
Pd Power Dissipation-230 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-240 A-
Vds Drain Source Breakdown Voltage-40 V-
Vgs th Gate Source Threshold Voltage-2.2 V to 3.9 V-
Rds On Drain Source Resistance-1.3 mOhms-
Qg Gate Charge-150 nC-
Forward Transconductance Min-122 S-
Top