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| PartNumber | AUIRFS8407 | AUIRFS8407-7P | AUIRFS8407-7 |
| Description | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-7 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 195 A | 240 A | - |
| Rds On Drain Source Resistance | 1.8 mOhms | 1.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 3.9 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 150 nC | 150 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 230 W | 230 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | CoolIRFet | CoolIRFet | CoolIRFet |
| Packaging | Tube | Tube | Tube |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon / IR | Infineon Technologies | - |
| Forward Transconductance Min | 160 S | 122 S | - |
| Fall Time | 53 ns | 51 ns | 51 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 70 ns | 62 ns | 62 ns |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 78 ns | 78 ns | 78 ns |
| Typical Turn On Delay Time | 19 ns | 18 ns | 18 ns |
| Part # Aliases | SP001520236 | SP001518052 | - |
| Unit Weight | 0.139332 oz | 0.056438 oz | 0.056438 oz |
| Package Case | - | - | TO-263-7 |
| Pd Power Dissipation | - | - | 230 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 240 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.2 V to 3.9 V |
| Rds On Drain Source Resistance | - | - | 1.3 mOhms |
| Qg Gate Charge | - | - | 150 nC |
| Forward Transconductance Min | - | - | 122 S |