 | | | |
| PartNumber | APTGT100A120D1G | APTGT100A1202G | APTGT100A120D1 |
| Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | |
| Manufacturer | Microchip | Microchip | Microsemi Corporation |
| Product Category | IGBT Modules | IGBT Modules | IGBTs - Modules |
| RoHS | Y | Y | - |
| Configuration | Dual | Dual | Half Bridge |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | - |
| Continuous Collector Current at 25 C | 150 A | 140 A | - |
| Gate Emitter Leakage Current | 300 nA | 400 nA | - |
| Pd Power Dissipation | 520 W | 480 W | - |
| Package / Case | D1-7 | SP2-18 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 100 C | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 50 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Product | - | IGBT Silicon Modules | - |
| Technology | - | Si | - |
| Unit Weight | - | 2.821917 oz | - |
| Series | - | - | - |
| Package Case | - | - | D1 |
| Mounting Type | - | - | Chassis Mount |
| Supplier Device Package | - | - | D1 |
| Input | - | - | Standard |
| Power Max | - | - | 520W |
| Current Collector Ic Max | - | - | 150A |
| Voltage Collector Emitter Breakdown Max | - | - | 1200V |
| Current Collector Cutoff Max | - | - | 3mA |
| IGBT Type | - | - | Trench Field Stop |
| Vce on Max Vge Ic | - | - | 2.1V @ 15V, 100A |
| Input Capacitance Cies Vce | - | - | 7nF @ 25V |
| NTC Thermistor | - | - | No |